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MOSIS provides electrical test data and SPICE parameters for most
wafer lots.
Wafer Electrical Test Data and SPICE Model Parameters
Active Processes
Lot-specific parametric results and SPICE device model
parameters are extracted from measurements on wafers probed at MOSIS.
SPICE level 3 model parameters for
classroom
instructional purposes, not for actual IC design work are also
available.
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AMIS 0.50 micron (C5)
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AMIS 0.35 micron (C3O)
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AMIS 1.50 micron (ABN)
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IBM 0.50 micron (5HP, 5AM, 5DM, 5PA)
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IBM 0.35 micron (5HPE, 5PAe)
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IBM 0.25 micron (6HP, 6DM, 6RF)
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IBM 0.18 micron (7RF, 7WL, 7SF, 7HP)
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IBM 0.13 micron (8RF-LM, 8RF-DM, 8HP, 8WL)
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IBM 90 nanometer (9SF, 9LP, 9RF)
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IBM 65 nanometer (10SF, 10LPe/10RFe)
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TSMC 0.18 micron
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TSMC 0.25 micron
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TSMC 0.35 micron
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Related Links
SPICE Parameters for Submicron Technologies (MOSIS perspectives)
MOSIS Process Monitor (used for test data measurements)
SPICE Simulation Summary (MOSIS Runs)
MOSIS FAQ: Wafer Electrical Specifications
MOSIS FAQ: Spice Model Parameters
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