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AMI Semiconductor
1.50 Micron
ABN Process
MOSIS is phasing out support for MPW (MultiProject Wafer)
runs in the ABN process in response to AMI's (now ON Semi)
moving ABN into end-of-life.
The date of the last ABN MPW will be February 23, 2009.
Dedicated run users should contact
MOSIS Support.
1. Process Description
This n-well CMOS process has 2 metal layers, 2 poly layers, and an NPN
option. PiP (poly2 over poly) capacitors (600 aF/µm²) are
available. MOSIS orders epi wafers for this process.
For more information, see the
AMIS Mixed-Signal Foundry Services web page.
2. Design Rules
This process support the following design rules
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Design Rules
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Lambda
(micro- meter)
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Feature Size
(micro- meter)
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Available
From
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AMIS_ABN
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n/a
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1.50
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AMIS (See Section 3)
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SCMOS
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0.80
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1.50
(after sizing)
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MOSIS in
HTML
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In order to achieve consistent and uniform electrical behavior for
both analog and digital designs, MOSIS recommends a design lambda of
0.8 µm for the AMIS ABN process. The minimum drawn MOS
transistor
channel length and contact diameter will then be 1.6 µm.
MOSIS also recommends, where uniform device characteristics are
important, that the minimum channel width (ACTIVE) be 5 lambda instead
of 3 lambda as stated in the
"MOSIS Scalable Design Rules 2.1." The
ABN process will continue to support use of the SCMOS tight metal
rules at lambda of 0.8 µm.
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MOSIS Technology Codes
See
Technology Codes for AMIS ABN Process.
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Important note about pads
The bonding pads on designs submitted to these runs should have metal1
(and via) under the metal2. If these guidelines are not followed,
metal lifting problems can occur.
3. AMIS Design Rules, Process Specifications, and SPICE
Parameters
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AMIS has sub-licensed MOSIS to distribute this information to
customers who do not have a
MyAMIS account. To obtain any
of these items you must have an account with MOSIS, submit the on-line
AMIS Access Request, then sign both the Confidentiality Agreement
(CDA) and Design Kit License Agreement (DKLA).
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4. Parametric Test Results and SPICE Model Parameters
See Test Results for
AMIS ABN runs.
5. Reticle/Wafer Size, Steps, Turnaround Time, Wafer and Die Thickness
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AMIS ABN Process
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Wafer Size
(inches)
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Reticle Size (mili- meters, approx.)
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Reticle Copies Stepped on Wafer (approx.)
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Turn- around Time (weeks, approx.)
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Die Thickness
(+/- .5 mil)
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Wafer Thickness
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Mils
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Micro- meters
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Mils
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Micro- meters
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5
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Ultratech 1X,
3 fields,
each 27 x 10
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Field 1: 7
Field 2: 9
Field 3: 5
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8 - 10
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10
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250
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26
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660
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Related Links
MOSIS-Supported AMIS Processes
AMIS Technology
Codes & Layer Maps
AMIS Document Access
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