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MOSIS Fabrication Processes
Technology descriptions, fabrication schedules, and vendor document
access procedures for the ON Semi, austriamicrosystems, IBM, TSMC, ON
Semi, austriamicrosystems, and Peregrine fabrication processes
available through MOSIS.
IBM Fabrication Processes
The IBM fabrication processes available through MOSIS
range from 45 nanometer to 0.25 µm in CMOS, and from
0.13 µm to 0.50 µm in SiGe BiCMOS.
TSMC Fabrication Processes
The TSMC fabrication processes available through MOSIS range from
40 nanometer to 0.35 µm. Low power, low voltage, and
high voltage options are available in most of these technologies.
ON Semiconductor Fabrication Processes
The ON Semi CMOS processes available through MOSIS range from
0.35 µm to 0.7 µm.
austriamicrosystems Fabrication Processes
Processes offered by MOSIS through austriamicrosystems include
0.35 µm CMOS, high voltage CMOS, SiGe BiCMOS, and
0.18 µm CMOS and high voltage CMOS.
Peregrine Fabrication Processes
The Peregrine fabrication processes available through MOSIS include
both 0.50 µm SOS process (FC and FA), and the two versions
of the 0.25 µm SOS process (GA and GC).
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For more information about MOSIS fabrication processes, please contact
support@mosis.com.
Related Links
MOSIS Fabrication Schedule
Customer Support
MOSIS Products
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