Products > Fab Processes
Technology descriptions, fabrication schedules, and vendor document access procedures for the ON Semi, austriamicrosystems, IBM, TSMC, ON Semi, austriamicrosystems, and Peregrine fabrication processes available through MOSIS.
Multiproject wafer (MPW) runs available through TSMC include a range of feature sizes from 40 nanometer to 0.35 µm, many available in low power, low voltage, and high voltage.
The Globalfoundries fabrication processes available through MOSIS include 0.18 µm, 0.13 µm, and 65 NM CMOS processes.
The IBM fabrication processes available through MOSIS range from 45 nanometer to 0.25 µm in CMOS, and from 0.13 µm to 0.50 µm in SiGe BiCMOS.
The ON Semi CMOS processes available through MOSIS range from 0.35 µm to 0.7 µm.
Processes offered by MOSIS through austriamicrosystems include 0.35 µm CMOS, high voltage CMOS, SiGe BiCMOS, and 0.18 µm CMOS and high voltage CMOS.
imec-ePIXfab SiPhotronics fabrication
For more information about MOSIS fabrication processes, please contact MOSIS Support Staff.