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MOSIS Supported Options
IBM 9LP/9RF CMOS Process
Unless stated otherwise, all options listed below are available on
MPW runs without additional cost. Other configurations are available
for dedicated runs, or on MPW runs by prior arrangement. Please
contact MOSIS support for
additional details, e.g. costs.
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Feature Group
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Option Descriptions
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Additional
Masks
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Part
Number
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Base Features for CMOS 9LP
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Always included
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40N1869
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Well
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N-well and p-well in substrate and an isolated p-well
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BF, N3
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93P2028
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Oxide
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Thin + thick oxide
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DG
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93P2055
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Zero-Vt
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Thin-oxide zero-Vt NFET
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DE
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41K8368
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Thick-oxide zero-Vt NFET
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DE, DG
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41K8370
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FET
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Regular-Vt + low-Vt + high-Vt + super
high-Vt + 1.8 V and/or 2.5 V I/O NFET
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XW, NR, HN, DG, JN, DE
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41K8308
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Regular-Vt + low-Vt + high-Vt + super
high-Vt + 1.8 V and/or 2.5 V I/O PFET
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LW, PR, HP, DG, JP, DF
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41K8312
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Resistor
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P+ polysilicon OP resistor
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OP
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06K7940
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N+ diffusion OP resistor
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OP
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41K9348
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N-well resistor
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17R4145
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Precision RP resistor
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OP, RP
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41C10102
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Capacitor
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Thin-oxide NFET in n-well capacitor (NCAP)
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41K8371
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Thin-oxide PFET in p-well capacitor (PCAP)
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PCAP, N3
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41C10092
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Thick-oxide NCAP
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DG
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41K8372
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Vertical natural capacitor (VNCAP)
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27R6144
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Miscellaneous
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Electrostatic discharge (ESD) devices
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OP
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27R3217
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Vertical PNP bipolar transistor
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OP
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17R4146
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SRAM
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SRAM cell
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SH
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41K9347
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Fuse
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Electrically programmable fuse (eFUSE)
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57P6150
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Bonding
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Aluminum wire bond
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VV, (LB, LD), DV
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01L6995
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Plated C4 (flip-chip)
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VV, (LB, LD), LV, TM
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01L69931
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Final Protection
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Wirebond only
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DV
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29L5231
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C4 only
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LV
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01L69981
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Metalization: Digital Stack
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Two 2x copper levels in a TEOS/FTEOS dielectric with LB
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WT, BA, WA, BB, VV
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17R4149
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Six Cu metal levels plus LB
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29L6986
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Nitride MiM capacitor
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HT, QT
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41K93792
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Metalization: Analog Stack2
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One 2x copper level in TEOS/FTEOS with 12x thick copper and LD
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WT, BA, JT, OL, VV, LD
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44K22012
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Six Cu metal levels, including LD
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29L69862
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BEOL inductor with LD, OL
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IND
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44K30852
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Single High-K MiM capacitor
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HK, QK
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44K58752
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Available but not qualified3
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BEOL inductor with LB topmetal (digital stack)
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70P6164
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Junction Field Effect Transistor (JFET)
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JC, N3
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48J8205
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Thin-oxide high-gain NFET
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KN
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27R6145
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Thin-oxide high-gain PFET
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KP
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27R6146
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3.3 V I/O NFET
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DG, JN, XE
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44K7056
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3.3 V I/O PFET
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DG, JP, DF
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44K7057
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Hyper-abrupt varactor
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JD
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57P5776
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Silicided poly resistor
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SILPCRES
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44K5768
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TaN BEOL Resistor
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K5
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44K5766
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Metal Stacks 4
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9-Metal Digital Metal Stack
9LB_6_02_00_00
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LB
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Bond metal
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VV
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M2_2B
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V1_2B
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2x thick metals
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M1_2B
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V0_2B
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M6
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V5
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M5
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V4
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M4
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V3
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M3
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1x thin metals
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V2
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M2
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V1
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M1
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CA
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8-Metal Analog Metal Stack
8LD_5_01_00_01
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LD
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Bond metal
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VV
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OL
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12x metal
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JT
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M1_2B
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2x thick metal
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V0_2B
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M5
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V4
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M4
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V3
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M3
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1x thin metals
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V2
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M2
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V1
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M1
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CA
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1 Subject to availability at additional cost. Advance notice required by
contacting MOSIS via the MOSIS Support System posted to
http://support.mosis.com/
2 This device can only be fabricated at one of IBM's foundries. All
other devices can be fabricated at any one of the
Common
Platform (CP) foundries. The CP is a collaboration between IBM
and several other foundries to provide advanced feature size
fabrication. Irrespective of which foundry is used, the designer can
be assured that their parts will behave as if they were fabricated at
IBM.
3
These options may not yet be qualified for reliability, or models are
not correlated to hardware at this time. Please check the current
manual for status.
4 Other configurations subject to availability with
sufficient notice to
support@mosis.com.
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Related Links
IBM 9LP/9RF Process
IBM Technology
Codes
MOSIS-Supported IBM Processes
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