The MOSIS BSIM3v3.1 model parameters are extracted using I-V data that are measured on a large array of test transistors included in the MOSIS process Monitor. A parameter extraction phase pays close attention to physical significance of the primary model parameters while the optimization phases focus on the parameters that make the model fit the full range of device sizes in a particular process. The resulting parameter accuracy is tested by simulating benchmark test circuits (inverter and ring oscillator) contained on the MOSIS Process Monitor. The simulation versus measured error must be less than 10% to have the model parameters be acceptable for MOSIS to post them in the wafer lot parametric test results.

The ring oscillator frequency and inverter gain simulation versus measured minimum, maximum and mean percentage errors are shown for different technologies. The minimum and maximum are taken from single points in the data set, and the mean represents the whole data set.

MOSIS 2007 Runs